| PART |
Description |
Maker |
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| K6T1008V2C K6T1008V2C-B K6T1008V2C-D K6T1008V2C-F |
128K x8 bit Low Power and Low Voltage CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LY62L12916 LY62L12916E LY62L12916GL LY62L12916GV L |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L1024 LY62L1024E LY62L1024GL LY62L1024GV LY62L |
128K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| EM6160FS32CW85L EM6160FV32CW85L EM6161FS32CW85L EM |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EM621FR8ES-45LF EM681FR8ES-45LF EM622FR8ES-45LF EM |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| HY628100BLLG HY628100BLT1-I HY628100B HY628100B-E |
128K x8 bit 5.0V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
| BS616UV2019AIP10 BS616UV2019DIG10 |
Ultra Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto...
|
| BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV201 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
|
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| BS616UV2011TI BS616UV2011EI BS616UV2011 BS616UV201 |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
| MX27C1000PI-70 MX27C1000QI-70 MX27C1000MI-55 MX27C |
Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
Single Output LDO, 3.0A, Fixed(2.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 128K X 8 OTPROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 70 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 120 ns, PQCC32
|
Macronix International Co., Ltd.
|
